MBRS30H45CT_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Dual Common Cathode Schottky Rectifier

MBRS30H45CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-263AB (D²PAK)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 1.41 g (approximately)
TO-263AB (D²PAK)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBRS30H45CT
Maximum repetitive peak reverse voltage
V_RRM
45
Maximum RMS voltage
V_RMS
31
Maximum DC blocking voltage
V_DC
45
Maximum average forward rectified current
I_F(AV)
30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
220
Maximum instantaneous forward voltage at (Note 1)
I_F = 15A, T_J=25℃
I_F = 15A, T_J=125℃
I_F = 30A, T_J=25℃
I_F = 30A, T_J=125℃
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
V_F
I_R
dV/dt
R_θJC
R_θJA
T_J
T_STG
0.70
0.60
0.90
0.75
0.2
15
10000
1.5
50
- 55 to +175
- 55 to +175
Unit
V
V
V
A
A
V
mA
V/μs
O_C/W
O_C
O_C
Document Number: D1308004
Version: G13