MBRS30H45CT Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 30.0 AMPS. Surface Mount Schottky Barrier Rectifiers

Pb RoHS
COMPLIANCE
Preliminary Specification
MBRS30H45CT
30.0 AMPS. Surface Mount Schottky Barrier Rectifiers
D²PAK
Features
— Plastic material used carries Underwriters Laboratory
Classifications 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability，low forward voltage drop
— High Surge capability　
— For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications.
— Guarding for over voltage protection
— High temperature soldering guaranteed: 260^oC/10 seconds
at terminals.
Mechanical Data
— Cases: JEDEC D²PAK molded plastic
— Terminals: Leads solderable per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position: Any
— Mounting torque: 5 in. - lbs. max
— Weight: 1.41 grams
GYWW
MBRS30H45CT
MBRS30H45CT = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MBRS30H45CT
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@Tc = 155^oC (Tatol Device)
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
Peak Repetitive Reverse Surge Current(Note1)
Maximum Instantaneous Forward Voltage at
(Note2)
IF = 15A, Tc=25^oC
IF = 15A, Tc=125^oC
IF = 30A, Tc=25^oC
IF = 30A, Tc=125^oC
Maximum DC Reverse Current @ Tc=25^oC
at Rated DC Blocking Voltage @ Tc=125^oC
Voltage Rate of Change (Rated V_R)
V_RRM
V_RMS
V_DC
I_(AV)
I_FSM
I_RRM
V_F
I_R
dv/dt
45
31
45
30.0
220.0
1.0
0.62
0.57
0.82
0.72
0.2
15.0
10,000
V
V
V
A
A
A
V
mA
V/uS
Maximum Thermal Resistance Per Leg (Note 3) R_θJC
1.5
O_C/W
Operating Temperature Range
T_J
-65 to +175
O_C
Storage Temperature Range
T_STG
-65 to +175
O_C
Note : 1. 2.0us Pulse Width,f=1.0 KH_Z
2. Pulse Test : 300us Pulse Width,1% Duty cycle
3. Thermal Resistance from Junction to Case Per Leg
Version : A09