MBRS1035_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers

MBRS1035 - MBRS10150
10.0 AMPS. Surface Mount Schottky Barrier Rectifiers
D²PAK
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260^oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC D²PAK molded plastic body
Terminals: Pure tin plated, lead free. solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBRS MBRS MBRS MBRS MBRS MBRS MBRS Units
1035 1045 1050 1060 1090 10100 10150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
VRRM
35
45
50
60
90 100 150
V
VRMS
24
31
35
42
63
70 105
V
VDC
35
45
50
60
90 100 150 V
I(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
120
A
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=10A, Tc=25^oC
IF=10A, Tc=125^oC
IF=20A, Tc=25^oC
IF=20A, Tc=125^oC
IRRM
VF
1.0
－
0.57
0.84
0.72
0.5
A
0.80
0.70
0.95
0.85
0.85
1.05
0.71
－
V
－
－
－
－
Maximum Instantaneous Reverse Current @ TJ =25 ^oC
at Rated DC Blocking Voltage (Note 2) @ TJ=100 ^oC
IR
0.1
15
10
0.1
mA
5.0
mA
Typical Junction capacitance
CJ
390
300
220
pF
Maximum Thermal Resistance, Junction to Case
R_ΘJA
R_ΘJC
Operating Junction Temperature Range
TJ
Storage Temperature Range
TSTG
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle.
60
2.0
-65 to +175
-65 to +175
o_C/W
o_C
o_C
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Version: B07