MBRI30100CT_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Dual Common Cathode Schottky Rectifier

MBRI30100CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: I²PAK
Molding compound, UL flammability classification rating 94V-0
I²PAK
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 1.4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBRI30100CT
Maximum repetitive peak reverse voltage
V_RRM
100
Maximum RMS voltage
V_RMS
70
Maximum DC blocking voltage
V_DC
100
Maximum average forward rectified current
I_F(AV)
30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
200
Maximum instantaneous forward voltage (Note 2)
I_F= 15 A, T_J=25℃
I_F= 15 A, T_J=125℃
V_F
I_F= 30 A, T_J=25℃
I_F= 30 A, T_J=125℃
0.84
0.70
0.94
0.82
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_R
dV/dt
R_θJC
T_J
T_STG
0.2
7.5
10000
1.5
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
mA
V/μs
O_C/W
O_C
O_C
Document Number: DS_D1310021
Version: E13