MBRF835CT_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Dual Common Cathode Schottky Rectifier

MBRF835CT thru MBRF8150CT
Taiwan Semiconductor
FEATURES
CREAT BY ART
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
ITO-220AB
Case: ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
MBRF MBRF MBRF MBRF MBRF
PARAMETER
SYMBOL 835 845 850 860 890
CT
CT
CT
CT
CT
Maximum repetitive peak reverse voltage
V_RRM
35
45
50
60
90
Maximum RMS voltage
V_RMS
24
31
35
42
63
Maximum DC blocking voltage
V_DC
35
45
50
60
90
Maximum average forward rectified current
I_F(AV)
8
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
150
MBRF
8100
CT
100
70
100
MBRF
8150
CT
150
105
150
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
I_F= 4 A
V_F
0.55
0.70
0.85
0.95
V
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_R
15
dV/dt
R_θJC
T_J
T_STG
0.1
10
5
10000
6
- 55 to +150
- 55 to +150
mA
V/μs
O_C/W
O_C
O_C
Document Number: DS_D131012
Version: I13