MBRF30L120CT_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Dual Common Cathode Schottky Rectifier

CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
MBRF30L120CT
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBRF30L120CT
Maximum repetitive peak reverse voltage
V_RRM
120
Maximum RMS voltage
V_RMS
84
Maximum DC blocking voltage
V_DC
120
Maximum average forward rectified current
I_F(AV)
30
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
I_FRM
30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
200
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I_F = 15A, T_J=25℃
I_F = 15A, T_J=125℃
I_F = 30A, T_J=25℃
I_F = 30A, T_J=125℃
Maximum reverse current @ rated VR
T_J=25 ℃
T_J=125 ℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
I_RRM
V_F
I_R
dV/dt
R_θJC
T_J
T_STG
1
TYP
MAX
0.81
0.88
0.66
0.75
0.89
0.95
0.76
0.82
TYP
MAX
1.1
20
1.7
25
10000
5
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
A
A
V
mA
V/μs
O_C/W
O_C
O_C
Document Number: D1308019
Version: E13