MBRF3080CT_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Dual Common Cathode Schottky Rectifier

MBRF3080CT
Taiwan Semiconductor
FEATURES
CREAT BY ART
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
ITO-220AB
Case: ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBRF3080CT
Maximum repetitive peak reverse voltage
V_RRM
80
Maximum RMS voltage
V_RMS
56
Maximum DC blocking voltage
V_DC
80
Maximum average forward rectified current
I_F(AV)
30
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
I_FSM
200
Peak repetitive reverse surge current (Note 1)
I_RRM
0.5
Maximum instantaneous forward voltage (Note 2)
I_F=15A, T_J=25℃
0.84
I_F=15A, T_J=125℃
V_F
0.70
I_F=30A, T_J=25℃
I_F=30A, T_J=125℃
0.94
0.82
Maximum reverse current @ rated VR
T_J=25 ℃
T_J=125 ℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
I_R
dV/dt
R_θJC
T_J
T_STG
0.2
10
10000
5
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
A
V
mA
V/μs
O_C/W
O_C
O_C
Document Number: DS_D1310008
Version: D13