MBRF2545CT-Y Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Dual Common Cathode Schottky Rectifier

MBRF2545CT-Y thru MBRF25150CT-Y
Taiwan Semiconductor
CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
MBRF
MBRF
MBRF
MBRF
PARAMETER
SYMBOL 2545
2560
25100
25150
CT-Y
CT-Y
CT-Y
CT-Y
Marking code
MBRF25
45CT
MBRF25
60CT
MBRF25
100CT
MBRF25
150CT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
45
V_RMS
31
V_DC
45
I_F(AV)
60
100
150
42
70
105
60
100
150
25
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
I_FRM
25
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
200
Maximum instantaneous forward voltage (Note 1)
I_F=12.5A, T_J=25℃
I_F=12.5A, T_J=125℃
I_F=25A, T_J=25℃
I_F=25A, T_J=125℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated V_R)
T_J=25 ℃
T_J=125 ℃
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
V_F
I_R
dV/dt
R_θjC
R_θjA
T_J
T_STG
-
0.75
0.85
0.95
-
0.65
0.75
0.92
0.82
-
0.92
1.02
0.73
-
0.88
0.98
2
0.1
15
10
7.5
5
10000
1
8
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
A
V
mA
V/μs
O_C/W
O_C
O_C
Document Number: DS_D1405048
Version: A14