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| MBRF20H100CT_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 10.0AMPS Isolated Schottky Barrier Rectifiers | |||
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Pb
RoHS
COMPLIANCE
CREAT BY ART
MBRF20H100CT - MBRF20H200CT
10.0AMPS Isolated Schottky Barrier Rectifiers
ITO-220AB
Features
 UL Recognized File # E-326243
 Plastic material used carriers Underwriters
Laboratory Classification 94V-0
 Metal silicon junction, majority carrier conduction
 Low power loss, high efficiency
 High current capability, low forward voltage drop
 High surge capability
 For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
 Guard-ring for overvoltage protection
 High temperature soldering guaranteed:
260â/10 seconds/.25", (6.35mm) from case
 Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
 Case: ITO-220AB molded plastic body
 Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
 Polarity: As marked
 Mounting position:Any
 Mounting torque: 5 in. - lbs, max
 Weight: 1.75 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBRF20HXXCT
= Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 â ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MBRF
20H100CT
MBRF
20H150CT
MBRF
20H200CT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TC=133â
VRRM
100
150
200
VRMS
70
105
140
VDC
100
150
200
IF(AV)
20
Peak Repetitive Surge Current (Rated VR, Square
Wave, 20KHz) at Tc=133â
IFRM
20
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC Method)
IFSM
150
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1
0.5
Maximum Instantaneous Forward Voltage (Note 2)
IF=10A, TA=25â
IF=10A, TA=125â
IF=20A, TA=25â
IF=20A, TA=125â
Maximum Reverse Current @ Rated VR
Voltage Rate of Change,(Rated VR)
TA=25 â
TA=125 â
RMS Isolation Voltage
(t=1.0 second, R.H.â¦30%,TA=25â)
VF
IR
dV/dt
VISO
0.85
0.88
0.75
0.75
0.95
0.97
0.85
0.85
5
2
10000
4500 (Note 3)
3500 (Note 4)
1500 (Note 5)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
RθjC
TJ
TSTG
3.5
- 65 to + 175
- 65 to + 175
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Note 3: Clip Mounting (on case), where lead does not overlap heatsink with 0.11" offset
Note 4: Clip Mounting (on case), where lead do overlap heatsink.
Note 5: Screw mounting with 4-40 screw, where washer diameter is â¦4.9mm (0.19")
Unit
V
V
V
A
A
A
A
V
uA
mA
V/us
V
OC/W
OC
OC
Version:E11
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