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| MBRF1635_13 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 16.0 AMPS. Isolated Schottky Barrier Rectifiers | |||
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CREAT BY ART
MBRF1635 - MBRF16150
16.0 AMPS. Isolated Schottky Barrier Rectifiers
ITO-220AC
Features
 UL Recognized File # E-326243
 Plastic material used carriers Underwriters
Laboratory Classification 94V-0
 Metal silicon junction, majority carrier conduction
 Low power loss, high efficiency
 High current capability, low forward voltage drop
 High surge capability
 For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
 Guard-ring for overvoltage protection
 High temperature soldering guaranteed:
260â/10 seconds, at terminals
 Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
 Case:ITO-220AC molded plastic body
 Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
 Polarity: As marked
 Mounting position:Any
 Mounting torque: 5 in. - lbs, max
 Weight: 1.7 grams
Ordering Information(example)
Part No. Package Packing Packing code
Packing code
(Green)
MBRF1635 ITO-220AC 50 / TUBE
C0
C0G
Maximum Ratings and Electrical Characteristics
Rating at 25 â ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbol
MBRF
1635
MBRF
1645
MBRF
1650
MBRF
1660
MBRF
1690
MBRF
16100
MBRF
16150
Unit
VRRM
35
45
50
60
90 100 150
V
Maximum RMS Voltage
VRMS
24
31
35
42
63
70 105
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
90 100 150
V
Maximum Average Forward Rectified Current
IF(AV)
16
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
IFRM
32
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage (Note 2)
IF=16A, TA=25â
IF=16A, TA=125â
Maximum Reverse Current @ Rated VR TA=25 â
TA=125 â
Voltage Rate of Change (Rated VR)
Typical Junction Capacitance
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
IRRM
VF
IR
dV/dt
Cj
RθjC
TJ
TSTG
1
0.5
0.63
0.75
0.85
0.57
0.65
0.75
0.5
0.3
15
10
7.5
10000
500
3
- 65 to + 150
- 65 to + 150
A
0.95
0.92
0.1
5
V
mA
V/us
pF
OC/W
OC
OC
Version:G12
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