MBRF1635_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 16.0 AMPS. Isolated Schottky Barrier Rectifiers

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MBRF1635 - MBRF16150
16.0 AMPS. Isolated Schottky Barrier Rectifiers
ITO-220AC
Features
— UL Recognized File # E-326243
— Plastic material used carriers Underwriters
Laboratory Classification 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
— Guard-ring for overvoltage protection
— High temperature soldering guaranteed:
260℃/10 seconds, at terminals
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case:ITO-220AC molded plastic body
— Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position:Any
— Mounting torque: 5 in. - lbs, max
— Weight: 1.7 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBRF16XX = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Symbol
MBRF
1635
MBRF
1645
MBRF
1650
MBRF
1660
MBRF
1690
MBRF
16100
MBRF
16150
Unit
V_RRM
35
45
50
60
90 100 150
V
Maximum RMS Voltage
V_RMS
24
31
35
42
63
70 105
V
Maximum DC Blocking Voltage
V_DC
35
45
50
60
90 100 150
V
Maximum Average Forward Rectified Current
at Tc=125℃
I_F(AV)
16
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125 ℃
I_FRM
32
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
I_FSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage (Note 2)
IF=16A, T_A=25℃
IF=16A, T_A=125℃
Maximum Reverse Current @ Rated VR T _A=25 ℃
T _A=125 ℃
Voltage Rate of Change (Rated V _R)
Typical Junction Capacitance
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
I_RRM
V_F
I_R
dV/dt
Cj
R_θjC
T_J
T_STG
1
0.5
0.63
0.75
0.85
0.57
0.65
0.75
0.5
0.3
15
10
7.5
10000
500
3
- 65 to + 150
- 65 to + 150
A
0.95
0.92
0.1
5
V
mA
V/us
pF
O_C/W
O_C
O_C
Version:F11