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MBRF10L100CT Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 10.0AMPS Isolated Low VF Schottky Barrier Rectifier
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MBRF10L100CT
10.0AMPS Isolated Low VF Schottky Barrier Rectifier
ITO-220AB
Features
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— Plastic material used carries Underwriters Laboratory
Classifications 94V-0
— High Surge current capability
— Qualified as per AEC-Q101
— Guard-ring for transient protection
— For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
— High temperature soldering guaranteed: 260℃/
10 seconds, 0.375"(9.5mm) lead lengths 5 lbs tension
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: ITO-220AB
— Terminals: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
— Polarity: As marked
— Mounting position: Any
— Mounting torque: 5 in-lbs. Max.
— Weight: 1.7 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBRF10LXXCT = Specific Device Code
G
= Green compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking voltage
Maximum Average Forward Rectified Current
Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
VRRM
VRMS
VDC
IF(AV)
IF(RMS)
IFSM
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
Maximum Instantaneous Forward Voltage at (Note 2)
IF = 5A, TA=25℃
IF = 5A, TA=125℃
VF
IF = 10A, TA=25℃
IF = 10A, TA=125℃
Maximum Reverse Current at Rated DC Blocking Voltage
TA=25 ℃
IR
TA=125 ℃
Voltage rate of change (Rated VR)
Typical Junction Capacitance (Note 3)
Maximum Thermal Resistance Per Leg
Operating Temperature Range
Storage Temperature Range
Note1: 2.0uS Pulse Width, F=1.0KHz, Continues 10 Cycles
Note2: Pulse Test : 300us Pulse Width, 1% Duty cycle
Note3: Measure at 1MHz and Applied Reverse Voltage of 4.0V D.C.
dV/dt
Cj
RθJC
TJ
TSTG
MBRF10L100CT
100
70
100
10
10
120
1
TYP
MAX
0.73
0.76
0.59
0.65
0.82
0.85
0.66
0.71
TYP
MAX
0.3
20
0.5
15
10,000
185
5.5
-55 to + 150
-55 to + 150
Unit
V
V
V
A
A
A
A
V
uA
mA
V/uS
pF
OC/W
OC
OC
Version:C11