MBR735_13 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 7.5 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

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Features
— Plastic material used carriers Underwriters
Laboratory Classification 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
— Guard-ring for overvoltage protection
— High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: JEDEC TO-220AC molded plastic body
— Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position:Any
— Mounting torque: 5 in. - lbs, max
— Weight: 1.85 grams
Ordering Information(example)
MBR735 - MBR7150
7.5 AMPS. Schottky Barrier Rectifiers
TO-220AC
Part No. Package
Packing
Packing code
Packing code
(Green)
MBR735 TO-220AC 50 / TUBE
C0
C0G
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Symbol
MBR
735
V_RRM
35
Maximum RMS Voltage
V_RMS
24
Maximum DC Blocking Voltage
V_DC
35
Maximum Average Forward Rectified Current
I_F(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
I_FRM
MBR
745
45
31
45
MBR
750
50
35
50
MBR
760
60
42
60
7.5
15
MBR
790
90
63
90
MBR
7100
100
70
100
MBR
7150
150
105
150
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
I_FSM
150
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at
IF=7.5A, T_A=25℃
IF=7.5A, T_A=125℃
IF=15A, T_A=25℃
IF=15A, T_A=125℃
(Note 2)
Maximum Instantaneous Reverse Current @ T_A=25 ℃
at Rated DC Blocking Voltage
@ T_A=125 ℃
Voltage Rate of Change (Rated V_R)
Typical Junction Capacitance
Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
I_RRM
V_F
I_R
dV/dt
Cj
R_θJC
R_θJA
T_J
T_STG
1.0
-
0.57
0.84
0.72
15
360
0.5
0.75
0.92
0.95
0.65
0.82
0.92
-
-
-
-
-
-
0.1
10
5
10000
280
200
160
5
15
- 65 to + 150
- 65 to + 175
Version:H12
Units
V
V
V
A
A
A
A
V
mA
V/us
pF
O_C/W
O_C
O_C