MBR4035PT_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 40.0 AMPS. Schottky Barrier Rectifiers

MBR4035PT - MBR40150PT
40.0 AMPS. Schottky Barrier Rectifiers
TO-3P/TO-247AD
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260^oC/10 seconds,0.17”(4.3mm)from case
Mechanical Data
Cases: JEDEC TO-3P/TO-247AD molded plastic
body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10 in. - lbs. max
Weight: 0.2 ounce, 5.6 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MBR
4035
PT
MBR
4045
PT
MBR
4050
PT
MBR
4060
PT
MBR MBR
4090 40100
PT
PT
Maximum Recurrent Peak Reverse Voltage
VRRM
35 45 50 60 90 100
Maximum RMS Voltage
VRMS
24 31 35 42 63 70
Maximum DC Blocking Voltage
VDC
35 45 50 60 90 100
Maximum Average Forward Rectified Current
at Tc=125^OC
I(AV)
40
Peak Repetitive Forward Current (Rated VR, Square
Wave, 20KHz) at Tc=120^oC
IFRM
40
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
330
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=20A, Tc=25^oC
IF=20A, Tc=125^oC
IF=40A, Tc=25^oC
IF=40A, Tc=125^oC
IRRM
VF
2.0
0.75
0.65
0.80
0.75
0.77
0.67
–
–
1.0
0.84
0.74
–
–
MBR
40150
PT
150
105
150
0.95
0.92
1.02
0.98
Units
V
V
V
A
A
A
A
V
Maximum Instantaneous Reverse Current
@ Tc=25 ^oC at Rated DC Blocking Voltage Per Leg
@ Tc=125 ^oC (Note 1)
Voltage Rate of Change at (Rated VR)
IR
dV/dt
1.0
30
10,000
Typical Thermal Resistance Per Leg (Note 3)
R_θJC
Operating Junction Temperature Range
TJ
Storage Temperature Range
TSTG
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg
0.5
20
10
1,000
1.2
-65 to +150
-65 to +175
mA
mA
V/uS
o_C/W
o_C
o_C
Version: A06