MBR30L45CT_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Dual Common Cathode Schottky Rectifier

MBR30L45CT thru MBR30L100CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBR
30L45CT
MBR
30L60CT
MBR
30L100CT
Maximum repetitive peak reverse voltage
V_RRM
45
60
100
Maximum RMS voltage
V_RMS
31
42
70
Maximum DC blocking voltage
V_DC
45
60
100
Maximum average forward rectified current
I_F(AV)
30
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
I_FRM
30
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I_F=15A, T_J=25℃
I_F=15A, T_J=125℃
Maximum reverse current @ Rated V_R T_J=25 ℃
T_J=100 ℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
I_FSM
I_RRM
V_F
I_R
dV/dt
R_θJC
T_J
T_STG
220
1
0.55
0.60
0.77
0.50
0.56
0.67
0.40
0.48
0.50
200
150
32
10000
1
- 55 to +150
- 55 to +175
UNIT
V
V
V
A
A
A
A
V
mA
V/μs
O_C/W
O_C
O_C
Document Number: DS_D1309001
Version: K13