MBR30L45CT Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 30.0AMPS Low VF Schottky Barrier Rectifiers

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MBR30L45CT - MBR30L100CT
30.0AMPS Low V_F Schottky Barrier Rectifiers
TO-220AB
Features
— UL Recognized File # E-326243
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— Plastic material used carriers Underwriters
Laboratory Classification 94V-0
— High surge current capability
— Guard-ring for overvoltage protection
— For use in low voltage - high frequency inventor,
free wheeling, and polarity protection application
— High temperature soldering guaranteed:
260℃/10 seconds/.375", (9.5mm) lead lengths
at 5 lbs.,(2.3kg) tension
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: JEDEC TO-220AB molded plastic
— Terminals: Pure tin plated leads, solderable
per MIL-STD-202, Method 208 guaranteed
Dimensions in inches and (millimeters)
Marking Diagram
— Polarity: As marked
— Mounting position:Any
MBR30LXXCT = Specific Device Code
— Mounting torque: 5 in- lbs, max
G
= Green Compound
— Weight: 1.92 grams
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
MBR
Symbol _30L45CT
MBR
30L60CT
MBR
30L100CT
Unit
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V_RRM
45
V_RMS
31
V_DC
45
Maximum Average Forward Rectified Current
@ T_C=120℃
I_F(AV)
Peak Repetitive Forward Current (Rated V_R, Square
Wave, 20KHz) at Tc=130℃
I_FRM
60
100
V
42
70
V
60
100
V
30
A
30
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load
I_FSM
220
A
Peak Repetitive Reverse Surge Current (Note 1)
I_RRM
1
A
Maximum Instantaneous Forward Voltage
IF=15A, T_A=25℃
IF=15A, T_A=125℃
IF=30A, T_A=25℃
IF=30A, T_A=125℃
0.55
V_F
0.50
0.74
0.67
Maximum Reverse Current @ Rated V_R T_A=25 ℃
(Note 2)
T_A=100 ℃
I_R
0.4
200
Voltage Rate of Change,(Rated V_R)
dV/dt
Typical Junction Capacitance (Note 3)
Cj
600
Typical Thermal Resistance (Note 4)
R_θjC
Operating Temperature Range
T_J
Storage Temperature Range
T_STG
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Note 3: Measure at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Note 4: Heatsink Size (4" x 6" x 0.25") Al-Plate
0.60
0.66
0.56
0.57
0.75
0.80
0.70
0.66
0.48
0.2
150
15
10000
460
1
- 65 to + 150
- 65 to + 175
V
uA
mA
V/us
pF
O_C/W
O_C
O_C
Version:G11