MBR3035CT_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 30.0AMPS. Schottky Barrier Rectifiers

Pb
RoHS
COMPLIANCE
Features
— Plastic material used carriers Underwriters
Laboratory Classification 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in low voltage - high frequency inventers,
free wheeling, and polarity protection applications
— Guard-ring for overvoltage protection
— High temperature soldering guaranteed:
260℃/10 seconds, 0.25", (6.35mm) from case
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
MBR3035CT - MBR30150CT
30.0AMPS. Schottky Barrier Rectifiers
TO-220AB
Mechanical Data
— Cases: JEDEC TO-220AB molded plastic
— Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position:Any
— Mounting torque: 5 in- lbs, max
— Weight: 1.90 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBR30XXCT = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
MBR
Symbol 3035
CT
Maximum Recurrent Peak Reverse Voltage
V_RRM
35
Maximum RMS Voltage
V_RMS
24
Maximum DC Blocking Voltage
V_DC
35
MBR
3045
CT
45
31
45
MBR
3050
CT
50
35
50
MBR
3060
CT
60
42
60
MBR
3090
CT
90
63
90
MBR MBR
30100 30150
CT CT
100 150
70 105
100 150
Units
V
V
V
Maximum Average Forward Rectified Current
I_F(AV)
30
A
Peak Repetitive Forward Current
(Rated V_R, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at
IF=15A, T_A=25℃
IF=15A, T_A=125℃
IF=30A, T_A=25℃
IF=30A, T_A=125℃
(Note 2)
Maximum Instantaneous Reverse Current @ T_A=25 ℃
at Rated DC Blocking Voltage Per Leg @ T_A=125 ℃
Voltage Rate of Change,(Rated V_R)
Typical Junction Capacitance @4V 1.0MHz
Maximum Thermal Resistance Per Leg
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle
I_FRM
I_FSM
I_RRM
V_F
I_R
dV/dt
Cj
R_θJC
T_J
T_STG
30
A
200
A
1.0
0.5
A
0.7
0.77
0.84
0.95
0.6
0.67
0.70
0.92
V
0.82
-
0.94
1.02
0.73
-
0.82
0.98
0.2
0.2
0.2
0.1 mA
15
10
7.5
5
mA
10,000
V/us
600
460
320
pF
1.0
1.5
- 65 to + 150
O_C/W
O_C
- 65 to + 175
O_C
Version:G11