MBR3035CT_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 30.0 AMPS. Schottky Barrier Rectifiers

MBR3035CT - MBR30150CT
30.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260^oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ^{MBR MBR MBR MBR MBR MBR}
3035 3045 3050 3060 3090 30100
CT CT CT CT CT CT
Maximum Recurrent Peak Reverse Voltage
VRRM
35 45 50 60 90 100
Maximum RMS Voltage
VRMS
24 31 35 42 63 70
Maximum DC Blocking Voltage
VDC
35 45 50 60 90 100
Maximum Average Forward Rectified Current at
TC=130^oC
I(AV)
30
Peak Repetitive Forward Current (Rated VR, Square
Wave, 20KHz) at Tc=130^oC
IFRM
30
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
200
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
Maximum Instantaneous Forward Voltage at (Note 2)
IF=15A, Tc=25^oC
IF=15A, Tc=125^oC
IF=30A, Tc=25^oC
VF
IF=30A, Tc=125^oC
0.7
0.6
0.82
0.73
0.77
0.67
－
－
0.84
0.70
0.94
0.82
MBR
30150
CT
150
105
150
0.95
0.92
1.02
0.98
Units
V
V
V
A
A
A
A
V
Maximum Instantaneous Reverse Current
@ Tc=25 ^oC at Rated DC Blocking Voltage Per Leg
@ Tc=125 ^oC (Note 2)
IR
0.2
15
0.2
10
0.2
0.1
7.5
5.0
Voltage Rate of Change, (Rated VR)
Typical Junction Capacitance
dV/dt
Cj
600
1,000
460
320
Maximum Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
R_θJC
TJ
1.0
1.5
-65 to +150
Storage Temperature Range
TSTG
-65 to +175
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate
mA
mA
V/uS
pF
o_C/W
o_C
o_C
Version: A06