MBR2535CT_13 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 25.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

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MBR2535CT - MBR25150CT
25.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
— Plastic material used carriers Underwriters
Laboratory Classification 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
— Guard-ring for overvoltage protection
— High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Cases: JEDEC TO-220AB molded plastic
— Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position:Any
— Mounting torque: 5 in. - lbs, max
— Weight: 1.90 grams
Ordering Information(example)
Part No.
Package Packing ^{Packing code}
Packing code
(Green)
MBR2535CT TO-220AB 50 / TUBE
C0
C0G
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Maximum Recurrent Peak Reverse Voltage
V_RRM
MBR
2535
CT
35
Maximum RMS Voltage
V_RMS
24
Maximum DC Blocking Voltage
V_DC
35
Maximum Average Forward Rectified Current
I_F(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
I_FRM
MBR
2545
CT
45
31
45
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
I_FSM
Peak Repetitive Reverse Surge Current (Note 1)
I_RRM
1.0
Maximum Instantaneous Forward Voltage at (Note 2)
IF=12.5A, T_A=25℃
IF=12.5A, T_A=125℃
IF=25A, T_A=25℃
IF=25A, T_A=125℃
-
V_F
-
0.82
0.73
Maximum Instantaneous Reverse Current @ T_A=25 ℃
at Rated DC Blocking Voltage Per Leg @ T_A=125 ℃
I_R
0.2
15
Voltage Rate of Change (Rated V_R)
dV/dt
Typical Junction Capacitance
Cj
600
Maximum Thermal Resistance Per Leg
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
R_θJC
T_J
T_STG
Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle
MBR
2550
CT
50
35
50
MBR
2560
CT
60
42
60
25
MBR
2590
CT
90
63
90
MBR MBR
25100 25150
CT CT
100 150
70 105
100 150
25
200
0.5
0.75
0.85
0.95
0.65
0.75
0.92
-
0.92
1.02
-
0.88
0.98
0.2
0.1
0.1
10
7.5
5
10,000
460
1.0
- 65 to + 150
- 65 to + 175
Units
V
V
V
A
A
A
A
V
mA
mA
V/us
pF
O_C/W
O_C
O_C
Version:H12