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| MBR20H100CT_13 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection | |||
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CREAT BY ART
Features
 Plastic material used carriers Underwriters
Laboratory Classification 94V-0
 Metal silicon junction, majority carrier conduction
 Low power loss, high efficiency
 High current capability, low forward voltage drop
 High surge capability
 For use in power supply - output rectification, power
management, instrumentation
 Guard-ring for overvoltage protection
 High temperature soldering guaranteed:
260â/10 seconds 0.25", (6.35mm) from case
 Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
 Cases: JEDEC TO-220AB molded plastic body
 Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
 Polarity: As marked
 Mounting position:Any
 Mounting torque: 5 in. - lbs, max
 Weight: 1.82 grams
Ordering Information(example)
MBR20H100CT - MBR20H200CT
20.0AMPS. Schottky Barrier Rectifiers
TO-220AB
Part No.
Package Packing Packing code
Packing code
(Green)
MBR20H100CT TO-220AB 50 / TUBE
C0
C0G
Maximum Ratings and Electrical Characteristics
Rating at 25 â ambient temperature unless otherwise specified.
Parameter
MBR
Symbol 20H100CT
MBR
20H150CT
MBR
20H200CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Repetitive Surge Current
(Rated VR, Square Wave, 20KHz)
VRRM
100
150
200
VRMS
70
105
140
VDC
100
150
200
IF(AV)
20
IFRM
20
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC Method)
IFSM
150
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
Maximum Instantaneous Forward Voltage at (Note 2)
IF=10A, TA=25â
0.85
0.88
IF=10A, TA=125â
VF
0.75
0.75
IF=20A, TA=25â
0.95
0.97
IF=20A, TA=125â
0.85
0.85
Maximum Instantaneius Reverse
Current at Rated DC Blocking Voltage
Voltage Rate of Change,(Rated VR)
Maximum Typical Thermal Resistance
@ TA=25 â
@ TA=125 â
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
IR
dV/dt
RθJC
TJ
TSTG
5
2
10,000
1.5
- 65 to + 175
- 65 to + 175
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Units
V
V
V
A
A
A
A
V
uA
mA
V/us
OC/W
OC
OC
Version:F12
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