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MBR2035PTV Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 20.0 AMPS. Schottky Barrier Rectifiers
MBR2035PT - MBR20150PT
20.0 AMPS. Schottky Barrier Rectifiers
TO-3P/TO-247AD
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.17”(4.3mm)from case
Mechanical Data
Cases: JEDEC TO-3P/TO-247AD molded plastic
body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10 in. - lbs. max
Weight: 0.2 ounce, 5.6 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Symbol
VRRM
VRMS
VDC
MBR
2035
PT
35
24
35
MBR
2045
PT
45
31
45
MBR
2050
PT
50
35
50
MBR
2060
PT
60
42
60
MBR
2090
PT
90
63
90
Maximum Average Forward Rectified Current
(SEE F1G. 1)
I(AV)
20
Peak Repetitive Forward Current (Rated VR, Square Wave,
20KHz) at Tc=105oC
IFRM
20
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
IFSM
Peak Repetitive Reverse Surge Current (Note 2)
IRRM
1.0
150
0.5
Maximum Instantaneous Forward Voltage at (Note 1)
IF=10A, Tc=25oC
IF=10A, Tc=125oC
IF=20A, Tc=25oC
IF=20A, Tc=125oC
-
0.80
VF
0.57
0.84
0.70
0.95
0.72
0.85
MBR
20100
PT
100
70
100
0.85
0.75
0. 95
0.85
MBR
20150
PT
150
105
150
0.95
0.92
1.02
0.98
Units
V
V
V
A
A
A
A
V
Maximum Instantaneous Reverse Current
@ Tc=25 oC
at Rated DC Blocking Voltage Per Leg(Note 2) @ Tc=125 oC
IR
0.1
15
10
0.1
5.0
Voltage Rate of Change at (Rated VR)
Maximum Thermal Resistance Per Leg(Note 3)
Operating Junction Temperature Range
Storage Temperature Range
dV/dt
RθJC
TJ
TSTG
10,000
1.0
-65 to +150
-65 to +175
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to case Per Leg. With Heatsink Size (4” x 6” x 0.25” ) Al. Plate.
mA
mA
V/uS
oC/W
oC
oC
Version: A06