MBR2035CT_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Dual Common Cathode Schottky Rectifier

MBR2035CT thru MBR20200CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AB
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 2035 2045 2050 2060 2090 20100 20150 20200
CT CT CT CT CT CT CT CT
Maximum repetitive peak reverse voltage
V_RRM
35
45
50
60
90
100 150 200
Maximum RMS voltage
V_RMS
24
31
35
42
63
70 105 140
Maximum DC blocking voltage
V_DC
35
45
50
60
90
100 150 200
Maximum average forward rectified current
I_F(AV)
20
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
I_FRM
20
UNIT
V
V
V
A
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I_F=10A, T_J=25℃
I_F=10A, T_J=125℃
I_F=20A, T_J=25℃
I_F=20A, T_J=125℃
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
I_FSM
I_RRM
V_F
I_R
dV/dt
R_θJC
T_J
T_STG
150
A
1
0.5
A
-
0.80
0.85
0.99
0.57
0.70
0.75
0.87
V
0.84
0.95
0.95
1.23
0.72
0.85
0.85
1.10
0.1
mA
15
10
5
0.15
10000
1.0
2.0
- 55 to +150
- 55 to +150
V/μs
O_C/W
O_C
O_C
Document Number: DS_D1308039
Version: L13