MBR2035CT-Y_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Dual Common Cathode Schottky Rectifier

MBR2035CT-Y thru MBR20200CT-Y
Taiwan Semiconductor
FEATURES
CREAT BY ART
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B106
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 2035 2045 2050 2060 2090 20100 20150 20200
CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y
UNIT
Marking code
MBR
2035
CT
MBR
2045
CT
MBR
2050
CT
MBR
2060
CT
MBR
2090
CT
MBR
20100
CT
MBR
20150
CT
MBR
20200
CT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
V_RRM
35
45
50
60
90
100 150 200
V
V_RMS
24
31
35
42
63
70
105 140
V
V_DC
35
45
50
60
90
100 150 200
V
I_F(AV)
20
A
I_FRM
20
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
150
A
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I_F=10A, T_J=25℃
I_F=10A, T_J=125℃
I_F=20A, T_J=25℃
I_F=20A, T_J=125℃
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
I_RRM
V_F
I_R
dV/dt
R_θJC
T_J
T_STG
1
0.5
A
-
0.80
0.85
0.99
0.57
0.70
0.75
0.87
V
0.84
0.95
0.95
1.23
0.72
0.85
0.85
1.10
0.1
mA
15
10
5
0.15
10000
1.0
2.0
- 55 to +150
- 55 to +150
V/μs
O_C/W
O_C
O_C
Document Number: DS_D1405043
Version:A14