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MBR1535CT_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 15.0 AMPS. Schottky Barrier Rectifiers
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MBR1535CT - MBR15150CT
15.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
— Plastic material used carriers Underwriters
Laboratory Classification 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
— Guard-ring for overvoltage protection
— High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Cases: JEDEC TO-220AB molded plastic body
— Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position:Any
— Mounting torque: 5 in. - lbs, max
— Weight: 1.90 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBR15XXCT = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
MBR
Symbol 1535
CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
35
VRMS
24
VDC
35
MBR
1545
CT
45
31
45
MBR
1550
CT
50
35
50
MBR
1560
CT
60
42
60
MBR
1590
CT
90
63
90
MBR
15100
CT
100
70
100
MBR
15150
CT
150
105
150
Maximum Average Forward Rectified Current
IF(AV)
15
Units
V
V
V
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at: (Note 2)
IF=7.5A, TA=25℃
IF=7.5A, TA=125℃
IF=15A, TA=25℃
IF=15A, TA=125℃
Maximum Instantaneous Reverse Current
at Rated DC Blocking Voltage
Voltage Rate of Change (Rated VR)
Typical Junction Capacitance
@ T A=25 ℃
@ T A=125 ℃
Maximum Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
IFRM
IFSM
IRRM
VF
IR
dV/dt
Cj
RθJA
RθJC
TJ
TSTG
15
A
150
A
1.0
0.5
A
-
0.75
0.92
1.05
0.57
0.65
0.82
0.92
V
0.84
-
-
-
0.72
-
-
-
0.5
0.3
10
7.5
0.1
mA
5.0
mA
10,000
V/us
400
200
pF
10
1.5
OC/W
- 65 to + 150
OC
- 65 to + 175
OC
Version:E11