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| MBR10H100CT_13 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency | |||
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CREAT BY ART
MBR10H100CT - MBR10H200CT
10.0AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
 Plastic material used carriers Underwriters
Laboratory Classification 94V-0
 Metal silicon junction, majority carrier conduction
 Low power loss, high efficiency
 High current capability, low forward voltage drop
 High surge capability
 For use in power supply - output rectification, power
management, instrumentation
 Guard-ring for overvoltage protection
 High temperature soldering guaranteed:
260â/10 seconds,0.25", (6.35mm) from case
 Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
 Cases: JEDEC TO-220AB molded plastic body
 Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
 Polarity: As marked
 Mounting position:Any
 Mounting torque: 5 in. - lbs, max
 Weight: 1.88 grams
Ordering Information(example)
Part No.
Package Packing Packing code
Packing code
(Green)
MBR10H100CT TO-220AB 50 / TUBE
D0
D0G
Maximum Ratings and Electrical Characteristics
Rating at 25 â ambient temperature unless otherwise specified.
Parameter
Symbol
Maximum Recurrent Peak Reverse Voltage
VRRM
MBR
10H100CT
100
Maximum RMS Voltage
VRMS
70
Maximum DC Blocking Voltage
VDC
100
Maximum Average Forward Rectified Current
IF(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
IFRM
MBR
10H150CT
150
105
150
10
10
MBR
10H200CT
200
140
200
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC Method)
IFSM
120
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
Maximum Instantaneous Forward Voltage at (Note 2)
IF=5A, TA=25â
0.85
0.88
IF=5A, TA=125â
VF
0.75
0.75
IF=10A, TA=25â
0.95
0.97
IF=10A, TA=125â
0.85
0.85
Maximum Instantaneous Reverse Current at Rated
DC Blocking Voltage @ TA=25 â
@ TA=125 â
IR
5
1
Voltage Rate of Change (Rated VR)
Maximum Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0 KHz
dV/dt
RθJC
TJ
TSTG
10,000
1.5
- 65 to + 175
- 65 to + 175
Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle
Version:G12
Units
V
V
V
A
A
A
A
V
uA
mA
V/us
OC/W
OC
OC
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