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| MBR10H100CT_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 10.0AMPS. Schottky Barrier Rectifiers | |||
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Pb
RoHS
COMPLIANCE
CREAT BY ART
MBR10H100CT - MBR10H200CT
10.0AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
 Plastic material used carriers Underwriters
Laboratory Classification 94V-0
 Metal silicon junction, majority carrier conduction
 Low power loss, high efficiency
 High current capability, low forward voltage drop
 High surge capability
 For use in power supply - output rectification, power
management, instrumentation
 Guard-ring for overvoltage protection
 High temperature soldering guaranteed:
260â/10 seconds,0.25", (6.35mm) from case
 Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
 Cases: JEDEC TO-220AB molded plastic body
 Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
 Polarity: As marked
 Mounting position:Any
 Mounting torque: 5 in. - lbs, max
 Weight: 1.88 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBR10HXXCT = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 â ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
MBR
Symbol 10H100CT
Maximum Recurrent Peak Reverse Voltage
VRRM
100
Maximum RMS Voltage
VRMS
70
Maximum DC Blocking Voltage
VDC
100
MBR
10H150CT
150
105
150
MBR
10H200CT
200
140
200
Maximum Average Forward Rectified Current
IF(AV)
10
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at: (Note 2)
IF=5A, TA=25â
IF=5A, TA=125â
IF=10A, TA=25â
IF=10A, TA=125â
Maximum Instantaneous Reverse Current at Rated
DC Blocking Voltage @ TA=25 â
@ TA=125 â
Voltage Rate of Change (Rated VR)
Maximum Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0 KHz
Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle
IFRM
IFSM
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
10
120
1.0
0.5
0.85
0.88
0.75
0.75
0.95
0.97
0.85
0.85
5
1
10,000
1.5
- 65 to + 175
- 65 to + 175
Units
V
V
V
A
A
A
A
V
uA
mA
V/us
OC/W
OC
OC
Version:F11
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