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MBR1035CT_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 10.0 AMPS. Schottky Barrier Rectifiers
CREAT BY ART
Pb
RoHS
COMPLIANCE
Features
— Plastic material used carriers Underwriters
Laboratory Classification 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
— Guard-ring for overvoltage protection
— High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
MBR1035CT - MBR10200CT
10.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
Mechanical Data
— Cases: JEDEC TO-220AB molded plastic body
— Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position:Any
— Mounting torque: 5 in. - lbs, max
— Weight: 1.88 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBR10XXCT = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Symbol
VRRM
VRMS
VDC
MBR
1035
CT
35
24
35
MBR
1045
CT
45
31
45
MBR
1050
CT
50
35
50
MBR
1060
CT
60
42
60
MBR
1090
CT
90
MBR
10100
CT
100
MBR
10150
CT
150
MBR
10200
CT
200
63 70 105 140
90 100 150 200
Units
V
V
V
Maximum Average Forward Rectified Current
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
IFRM
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
IFSM
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
Maximum Instantaneous Forward Voltage at (Note 2)
IF=5A, TA=25℃
0.70
IF=5A, TA=125℃
VF
0.57
IF=10A, TA=25℃
0.80
IF=10A, TA=125℃
0.67
Maximum Instantaneous Reverse Current @ T A=25 ℃
at Rated DC Blocking Voltage
@ T A=125 ℃
IR
15
Voltage Rate of Change (Rated V R)
dV/dt
Maximum Typical Thermal Resistance
RθJC
Operating Junction Temperature Range
TJ
Storage Temperature Range
TSTG
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
10
120
0.5
0.80
0.85
0.65
0.75
0.90
0.95
0.75
0.85
0.1
10
2
10,000
1.5
- 65 to + 150
- 65 to + 175
0.88
0.78
0.98
0.88
5
A
A
A
V
mA
mA
V/us
OC/W
OC
OC
Version:H11