MBD4448HAQW_15 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Switching Diode

Small Signal Product
MBD4448HAQW/HADW/HCDW/HSDW/HTW
Taiwan Semiconductor
Switching Diode
FEATURES
- Fast switching speed
- Surface device type mounting
- Moisture sensitivity level 1
- High conductance power dissipation
- For general purpose switching applications
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: SOT-363 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
SOT-363
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
200
Repetitive Peak Reverse Voltage
V_RRM
80
Reverse Voltage
V_R
57
Average Rectified Forward Current
I_F(AV)
500
Average Rectified Output Current
I_O
250
@ t = 1 μs
4
Non-Repetitive Peak Forward Surge Current
I_FSM
@t=1s
1.5
Thermal Resistance (Junction to Ambient)
R_θJA
625
Junction and Storage Temperature Range
T_J , T_STG
-55 to 150
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I_R=100μA
I_F=5.0mA
I_F=10mA
I_F=100mA
I_F=150mA
V_R=70V
V_R=75V, T_J=150^oC
V_R=25V, T_J=150^oC
V_R=20V
V_R=6V, f=1MHz
I_F=5mA, V_R=6V
Note 1: Device mounted on FR-4 PCB, 1 inch × 0.85 inch × 0.062 inch
Note 2: Short duration test pulse uesd tu minimize self-heating effect
SYMBOL
V_(BR)
V_F
V_F
C_J
t_rr
MIN
80
0.620
-
-
-
-
-
-
-
-
-
MAX
-
0.715
0.855
1.000
1.250
100
50
30
25
3.5
4.0
UNIT
mW
V
V
mA
mA
A
o_C/W
o_C
UNIT
V
V
nA
μA
μA
nA
pF
ns
Document Number: DS_S1501009
Version: C15