LS4448 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 500mW Hermetically Sealed Glass Fast Switching Diodes

Pb RoHS
COMPLIANCE
LS4448 /LS4148/LS914B
500mW Hermetically Sealed Glass Fast
Switching Diodes
QUADRO MINI MELF
Features
— Fast switching device (T_RR< 4.0nS)
— Quadro Mini-MELF package
— Surface device type mounting
— Hermetically sealed glass
— Compression bonded construction
— All external surfaces are corrosion
resistant and leads are readily solderable
— RoHS compliant
— Matte Tin (Sn) lead finish
— 1^st band indicates cathode
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25^oCambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Power Dissipation
Pd
500
Working Inverse Voltage
WIV
75
Non-repetitive Peak Forward Current
IFM
450
Average Rectified Current
Io
150
Peak Forward Surge Current
Operating Junction Temperature
Storage Temperature Range
Electrical Characteristics
I_FSURGE
T_J
T_STG
2
175
-65 to + 200
Type Number
Symbol
Min
Max
Breakdown Voltage
IR=100uA
IR=5uA
B_V
100
75
Forward Voltage
LS4448, LS914B IF=5.0mA
LS4148 IF= 10mA
VF
0.62
-
0.72
1.0
LS4448, LS914B IF =100mA
1.0
Reverse Leakage Current
VR=20V
VR=75V
IR
25
5
Junction Capacitance VR=0, f=1.0MHz
Cj
-
4.0
Reverse Recovery Time (Note 1)
trr
-
4.0
Notes: 1. Reverse Recovery Test Conditions: I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
Units
mW
V
mA
mA
A
O_C
O_C
Units
V
V
nA
uA
pF
nS
Version: B07