LS4148_09 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 500mW High Speed SMD Switching Diode

Small Signal Diode
LS4148/LS4448/LS914B
500mW High Speed SMD Switching Diode
QUADRO Mini-MELF (LS34)
HERMETICALLY SEALED GLASS
Features
—Fast switching device(Trr<4.0nS)
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
Mechanical Data
—Case : QUADRO Mini-MELF Package (JEDEC DO-213)
—High temperature soldering guaranteed : 270°C/10s
—Polarity : Indicated by cathode band
—Weight : 29 ± 2.5 mg
Ordering Information
C
B
D
E
A
Dimensions
A
B
C
D
E
Unit (mm)
Min Max
3.30 3.70
1.40 1.60
0.25 0.40
1.25 1.40
1.80
Unit (inch)
Min Max
0.130 0.146
0.055 0.063
0.010 0.016
0.049 0.055
0.071
Part No.
LSxxxx L1
LSxxxx L0
Package
Packing
QUADRO Mini-MELF 2.5Kpcs / 7" Reel
QUADRO Mini-MELF 10Kpcs / 13" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Surge Current
Non-Repetitive Peak Forward Current
Mean Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
VRSM
VRRM
IFSM
IFM
IO
RθJA
TJ, TSTG
Value
500
100
75
2
450
150
300
-65 to + 200
Electrical Characteristics
Type Number
Symbol
Min
Max
Reverse Breakdown Voltage
IR=100uA
IR=5uA
100
-
V(BR)
75
-
Forward Voltage
LS4448, LS914B
LS4148
IF=5.0mA
IF=10.0mA
0.62
0.72
VF
-
1.0
LS4448, LS914B
IF=100.0mA
-
1.0
Reverse Leakage Current
VR=20V
VR=75V
-
25
IR
-
5.0
Junction Capacitance
VR=0, f=1.0MHz
CJ
-
4.0
Reverse Recovery Time (Note 2)
Trr
-
4.0
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
Units
mW
V
V
A
mA
mA
°C/W
°C
Units
V
V
nA
μA
pF
ns
Version : C09