LLDB3_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 150mW Bi-directional Trigger Diode

Small Signal Product
LLDB3/ LLDB3TG
Taiwan Semiconductor
150mW Bi-directional Trigger Diode
FEATURES
- Surface mounted device
- Hermetically sealed glass
- Matte Tin(Sn) terminal finish
- All external surfaces are corrosion resistant and
terminals are readily solderable
MECHANICAL DATA
- Case: Mini-MELF package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 29 ± 2.5 mg
- Terminal: Pure tin plated, lead free,
solderable per MIL-STD-202, method 208 guaranteed
- Pb free and RoHS compliant
Mini-MELF (LL34)
Hermetically Sealed Glass
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Repetitive Peak Forward Current
Pulse Width = 20µs
I_FRM
Power Dissipation
P_D
Thermal Resistance (Junction to Ambient)
(Note)
R_θJA
Junction and Storage Temperature Range
T_J, T_STG
Notes: Valid provided that electrodes are kept at ambient temperature
2
150
400
- 40 to + 125
UNIT
A
mW
o_C/W
o_C
Break-Over Voltage
PARAMETER
Break-Over Voltage Symmetry
Dynamic Breakdown Voltage
Output Voltage
Leakage Current
Break-Over Current
Notes: Test Circuit
LLDB3
LLDB3TG
LLDB3
LLDB3TG
LLDB3
LLDB3TG
LLDB3
LLDB3TG
SYMBOL
V_BO
MIN
28
30
+ / -V_BO
5
△V
9
V_O
5
I_B
I_BO
-
TYP
32
32
MAX
36
34
±3
±2
10
100
15
TEST CONDITION
C=22nF
C=22nF
I_BO to I_F=10mA
(Note)
V_B = 0.5V_BO (Max)
C=22nF
UNIT
V
V
V
V
µA
µA
Document Number: DS_S1407002
Version: D14