LL4148_09 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 500mW High Speed SMD Switching Diode

Small Signal Diode
LL4148/LL4448/LL914B
500mW High Speed SMD Switching Diode
Mini-MELF (LL34)
HERMETICALLY SEALED GLASS
Features
—Fast switching device(Trr<4.0nS)
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
Mechanical Data
—Case : Mini-MELF Package (JEDEC DO-213AC)
—High temperature soldering guaranteed : 270°C/10s
—Polarity : Indicated by cathode band
—Weight : 50.8 ± 0.5 mg
Ordering Information
C
B
D
A
Dimensions
A
B
C
D
Unit (mm)
Min Max
3.30 3.70
1.40 1.60
0.25 0.40
1.25 1.40
Unit (inch)
Min Max
0.130 0.146
0.055 0.063
0.010 0.016
0.049 0.055
Part No.
LLxxxx L1
LLxxxx L0
Package
Mini-MELF
Mini-MELF
Packing
2.5Kpcs / 7" Reel
10Kpcs / 13" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Surge Current
Pulse Width 8.3ms
Non-Repetitive Peak Forward Current
Mean Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
VRSM
VRRM
IFSM
IFM
IO
RθJA
TJ, TSTG
Value
500
100
75
2.0
450
150
300
-65 to + 200
Electrical Characteristics
Type Number
Symbol
Min
Max
Reverse Breakdown Voltage
IR=100uA
IR=5uA
100
V(BR)
75
Forward Voltage
LL4448, LL914B
LL4148
IF=5.0mA
IF=10.0mA
0.62
0.72
VF
1.0
LL4448, LL914B
IF=100.0mA
1.0
VR=20V
25
Reverse Leakage Current
IR
VR=75V
5.0
Junction Capacitance
VR=0, f=1.0MHz
CJ
4.0
Reverse Recovery Time (Note 2)
Trr
4.0
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
Units
mW
V
V
A
mA
mA
°C/W
°C
Units
V
V
nA
μA
pF
ns
Version : D09