KTC3198-O Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – TO-92 NPN Bipolar Transistor

Small Signal Product
TO-92 NPN Bipolar Transistor
FEATURES
- The transistor is subdivided into four groups according to
its DC current gain: O, Y, GR, BL
- Pb free and RoHS compliant
KTC3198-O/Y/GR/BL
Taiwan Semiconductor
MECHANICAL DATA
- Case: TO-92 small outline plastic package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 195mg (approximately)
APPLICATION
- General purpose switching and AF amplifier application
1. Emitter
2. Collector
3. Base
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Collector Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance From Junction to Ambient
Junction and Storage Temperature Range
P_C
V_CBO
V_CEO
V_EBO
I_C
R_θJA
T_J , T_STG
0.5
60
50
5
0.15
250
-55 to + 150
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V_CB= 60V, I_E= 0
V_EB= 5V, I_C= 0
V_CE= 6V, I_C= 2mA
V_CE= 6V, I_C= 150mA
I_C= 100mA, I_B=10mA
I_C= 100mA, I_B=10mA
V_CE= 10V, I_C=1mA
V_CB= 10V, I_E=0, f=1MHz
CLASSIFIACTION OF h_FE
RANK
O
RANGE
70-140
Y
120-240
SYMBOL
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
GR
200-400
MIN
-
-
70
25
80
BL
300-700
MAX
0.1
0.1
700
0.25
1
3.5
UNIT
W
V
V
V
A
℃/W
°C
UNIT
μA
μA
V
V
MHz
pF
Document Number: DS_S1405004
Version: A14