HT11G_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Glass Passivated High Efficient Rectifiers

CREAT BY ART
Glass Passivated High Efficient Rectifiers
FEATURES
- Glass passivated chip junction
- High current capability
- High reliability
- High surge current capability
- High efficiency, Low VF
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
HT11G thru HT18G
Taiwan Semiconductor
MECHANICAL DATA
Case: TS-1
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25^oC unless otherwise noted)
PARAMETER
HT HT HT HT HT HT
SYMBOL
11G 12G 13G 14G 15G 16G
HT
17G
HT
18G
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
50 100 200 300 400 600 800 1000 V
35 70 140 210 280 420 560 700 V
50 100 200 300 400 600 800 1000 V
1
A
30
A
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
Maximum reverse current @ rated VR T_J=25 ^oC
T_J=125 ^oC
I_R
Maximum reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
R_θJA
T_J
T_STG
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
1.0
1.3
1.7
5
150
50
75
15
10
95
- 55 to +150
- 55 to +150
V
μA
ns
pF
O_C/W
O_C
O_C
Document Number: DS_D1407005
Version: F14