HS3AB_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 3.0AMPS High Efficient Surface Mount Rectifiers

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Pb
RoHS
COMPLIANCE
HS3AB - HS3MB
3.0AMPS High Efficient Surface Mount Rectifiers
SMB/DO-214AA
Features
— Glass passivated junction chip.
— For surface mounted application
— Low forward voltage drop
— Low profile package
— Built-in stain relief, ideal for automatic
placement
— Fast switching for high efficiency
— High temperature soldering:
260℃/10 seconds at terminals
— Plastic material used carries Underwriters
Laboratory Classification 94V-0
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: Molded plastic
— Terminal: Pure tin plated, lead free
— Polarity: Indicated by cathode band
— Packing: 12mm tape per EIA STD RS-481
— Weight: 0.093 grams
Dimensions in inches and (millimeters)
Marking Diagram
HS3XB = Specific Device Code
G
= Green Compound
Y
= Year
M
= Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
HS
3AB
HS
3BB
HS
3DB
HS
3FB
HS
3GB
HS
3JB
HS
3KB
HS
3MB
Unit
Maximum Repetitive Peak Reverse Voltage
V_RRM 50 100 200 300 400 600 800 1000
V
Maximum RMS Voltage
V_RMS
35
70 140 210 280 420 560 700
V
Maximum DC Blocking Voltage
V_DC
50 100 200 300 400 600 800 1000
V
Maximum Average Forward Rectified Current
I_F(AV)
3
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
I_FSM
100
A
Maximum Instantaneous Forward Voltage (Note 1)
@3A
V_F
1.0
1.3
1.7
V
Maximum Reverse Current @ Rated VR T_A=25 ℃
T _A=125 ℃
I_R
Maximum Reverse Recovery Time (Note 2)
Trr
10
250
50
uA
75
nS
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Cj
R_θjA
T_J
T_STG
80
50
pF
60
O_C/W
- 55 to + 150
O_C
- 55 to + 150
O_C
Note 2: Reverse Recovery Test Conditions: I _F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:G11