HERF1601G_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 16.0AMPS. Isolated Glass Passivated High Efficient Rectifiers

Pb
RoHS
COMPLIANCE
CREAT BY ART
HERF1601G - HERF1608G
16.0AMPS. Isolated Glass Passivated High Efficient Rectifiers
ITO-220AB
Features
UL Recognized File # E-326243
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor,
free wheeling, and polarity protection application
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: ITO-220AB Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed: 260℃/10s
/0.25", (6.35mm) from case
Mounting torque: 5 in-lbs. max
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Marking Diagram
HERF160XG = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
HERF
1601G
HERF HERF
1602G 1603G
HERF
1604G
HERF
1605G
HERF
1606G
HERF
1607G
HERF
1608G
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375 (9.5mm) Lead Length @ T_C=100℃
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
V_RRM 50 100 200 300 400 600 800 1000
V_RMS
35
70 140 210 280 420 560 700
V_DC
50 100 200 300 400 600 800 1000
I_F(AV)
16.0
I_FSM
125
Maximum Instantaneous Forward Voltage (Note 1)
@ 8.0A
V_F
1.0
1.3
1.7
Maximum Reverse Current @ Rated VR T_A=25 ℃
T _A=125 ℃
I_R
Maximum Reverse Recovery Time (Note 2)
Trr
10
400
50
80
Typical Junction Capacitance (Note 3)
Cj
80
50
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
R_θjC
T_J
T_STG
1.5
- 65 to + 150
- 65 to + 150
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Unit
V
V
V
A
A
V
uA
nS
pF
O_C/W
O_C
O_C
Version:E11