HERAF801G_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – Isolated 8.0 AMPS. Glass Passivated High Efficient Rectifiers

HERAF801G - HERAF808G
Isolated 8.0 AMPS. Glass Passivated High Efficient Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.124(3.16)
.118(3.00)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.112(2.85)
.100(2.55)
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
.272(6.9)
.248(6.3)
.063(1.6)
MAX
.110(2.8)
.098(2.5)
.030(0.76)
.020(0.50)
.055(1.4)
.043(1.1)
.035(0.9)
.020(0.5)
.606(15.5)
.583(14.8)
.161(4.1)
.146(3.7)
.071(1.8) .543(13.8)
MAX
.512(13.2)
2
Cases: ITO-220AC molded plastic
Epoxy: UL 94V0 rate flame retardant
Terminals: Pure tin plated, lead free solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260^oC/ 0.25” (6.35mm) from case for 10
seconds
Mounting torque: 5 in – 1bs. Max.
Weight: 2.24 grams
.100(2.55)
.100(2.55)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Rating and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ^{HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF} Units
801G 802G 803G 804G 805G 806G 807G 808G
Maximum Recurrent Peak Reverse Voltage V_RRM 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage
V_RMS 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@TC =100 ^oC
V_DC
I_(AV)
50 100 200 300 400 600 800 1000 V
8.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
I_FSM
150
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@8.0A
V_F
Maximum DC Reverse Current @ TA=25 ^oC
at Rated DC Blocking Voltage @ TA=125 ^oC
I_R
1.0
1.3
1.7
V
10
uA
400
uA
Maximum Reverse Recovery Time (Note 1)
Trr
50
80
nS
Typical Junction Capacitance ( Note 2 )
Cj
80
60
pF
Typical Thermal resistance (Note 3)
R_θJC
2.0
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
o_C/W
o_C
o_C
Version: A06