HERAF801G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – Isolation 8.0 AMPS. Glass Passivated High Efficient Rectifiers

HERAF801G THRU HERAF808G
Features
Isolation 8.0 AMPS. Glass Passivated High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
ITO-220AC
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
.185(4.7)
.173(4.4)
.124(3.16)
.118(3.00)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
.112(2.85)
.100(2.55)
.606(15.5)
.583(14.8)
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-
STD-202, Method 208 guaranteed
Polarity: As marked
.063(1.6)
MAX
.110(2.8)
.098(2.5)
.161(4.1)
.146(3.7)
.071(1.8) .543(13.8)
MAX
.512(13.2)
High temperature soldering guaranteed:
260^oC/ 0.25” (6.35mm) from case for 10
seconds
Mounting torque: 5 in – 1bs. Max.
PIN 1
PIN 2
Case Positive
.100(2.55)
2
.100(2.55)
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Rating and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ^{HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF} Units
801G 802G 803G 804G 805G 806G 807G 808G
Maximum Recurrent Peak Reverse Voltage _VRRM 50 100 200 300 400 600 800 1000 _V
Maximum RMS Voltage
V_RMS ^{35 70 140 210 280 420 560 700} V
Maximum DC Blocking Voltage
V_DC ^{50 100 200 300 400 600 800 1000} V
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
I_(AV)
8.0
A
@TC =100℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
I_FSM
150
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@8.0A
V_F
1.0
1.3
1.7
V
Maximum DC Reverse Current @ TA=25℃
I_R
at Rated DC Blocking Voltage @ TA=125℃
10.0
uA
400
uA
Maximum Reverse Recovery Time (Note 1)
Trr
50
80
nS
Typical Junction Capacitance ( Note 2 )
Cj
80
60
pF
Typical Thermal Resistance (Note 3)
RθJC
2.0
℃/W
Operating Temperature Range
TJ
-65 to +150
℃
Storage Temperature Range
TSTG
-65 to +150
℃
Notes: 1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate..
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