HERAF1001G_12 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 10.0AMPS. Isolated Glass Passivated High Efficient Rectifiers

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HERAF1001G - HERAF1008G
10.0AMPS. Isolated Glass Passivated High Efficient Rectifiers
ITO-220AC
Features
UL Recognized File # E-326243
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor,
free wheeling, and polarity protection application
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: ITO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260℃/10 secnods/0.25", (6.35mm) from case
Mounting torque: 5 in-lbs. max
Weight: 1.74 grams
Dimensions in inches and (millimeters)
Marking Diagram
HERAF100XG = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
HERAF
1001G
HERAF
1002G
HERAF
1003G
HERAF
1004G
HERAF
1005G
HERAF
1006G
HERAF
1007G
HERAF
1008G
Maximum Recurrent Peak Reverse Voltage
V_RRM
50
100 200 300 400 600 800 1000
Maximum RMS Voltage
V_RMS
35
70 140 210 280 420 560 700
Maximum DC Blocking Voltage
V_DC
50
100 200 300 400 600 800 1000
Units
V
V
V
Maximum Average Forward Rectified Current
I_F(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
I_FSM
150
A
Maximum Instantaneous Forward Voltage (Note 1)
@ 10 A
V_F
1.0
1.3
1.7
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T _A=25 ℃
@ T _A=125 ℃
I_R
Maximum Reverse Recovery Time (Note 2)
Trr
10
400
50
uA
uA
80
nS
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Cj
R_θJC
T_J
T_STG
80
60
pF
2.0
O_C/W
- 65 to + 150
O_C
- 65 to + 150
O_C
Note 2: Reverse Recovery Test Conditions: I _F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:E12