HERA801G_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 8.0AMPS. Glass Passivated High Efficient Rectifiers

Pb
RoHS
COMPLIANCE
CREAT BY ART
Features
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor,
free wheeling, and polarity protection application
Green compound with suffix "G" on packing
code & prefix "G" on datecode
HERA801G - HERA808G
8.0AMPS. Glass Passivated High Efficient Rectifiers
TO-220AC
Mechanical Data
Case: TO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260℃/10s/.16", (4.06mm) from case
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Marking Diagram
HERA80XG = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
HERA
801G
HERA HERA HERA HERA HERA HERA
802G 803G 804G 805G 806G 807G
HERA
808G
Unit
Maximum Repetitive Peak Reverse Voltage
V_RRM 50 100 200 300 400 600 800 1000
V
Maximum RMS Voltage
V_RMS
35
70 140 210 280 420 560 700
V
Maximum DC Blocking Voltage
V_DC
50 100 200 300 400 600 800 1000
V
Maximum Average Forward Rectified Current
I_F(AV)
8
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
I_FSM
150
Maximum Instantaneous Forward Voltage (Note 1)
@8A
V_F
1.0
1.3
1.7
Maximum Reverse Current @ Rated VR T_A=25 ℃
T _A=125 ℃
I_R
Maximum Reverse Recovery Time (Note 2)
Trr
10
400
50
80
Typical Junction Capacitance (Note 3)
Cj
65
55
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
R_θjC
T_J
T_STG
2
- 65 to + 150
- 65 to + 150
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
A
V
uA
nS
pF
O_C/W
O_C
O_C
Version:F11