HERA801G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 8.0 AMPS. Glass Passivated High Efficient Rectifiers

HERA801G THRU HERA808G
Features
8.0 AMPS. Glass Passivated High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
TO-220A
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260^oC/10 seconds .16”,(4.06mm) from
case.
Weight: 2.24 grams
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
PIN1
2
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Rating and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ^{HERA HERA HERA HERA HERA HERA HERA HERA} Units
801G 802G 803G 804G 805G 806G 807G 808G
Maximum Recurrent Peak Reverse Voltage _VRRM 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage
V_RMS 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@TC =100℃
V_DC 50 100 200 300 400 600 800 1000 V
I_(AV)
8.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
I_FSM
150
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@8.0A
V_F
1.0
1.3
1.7
V
Maximum DC Reverse Current
@ TA=25℃ at Rated DC Blocking Voltage
IR
@ TA=125℃
10.0
uA
400
uA
Maximum Reverse Recovery Time (Note 1) Trr
50
80
nS
Typical Junction Capacitance (Note 2)
Cj
65
55
pF
Typical Thermal Resistance (Note 3)
RθJC
2.0
℃/W
Operating Temperature Range
TJ
-65 to +150
℃
Storage Temperature Range
TSTG
-65 to +150
℃
Notes: 1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
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