HER801G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 8.0 AMPS. Glass Passivated High Efficient Rectifiers

HER801G THRU HER808G
Features
8.0 AMPS. Glass Passivated High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
R-6
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-STD-
202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260^oC/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Mounting position: Any
Weight: 1.65 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HER HER HER HER HER HER HER HER
801G 802G 803G 804G 805G 806G 807G 808G
Maximum Recurrent Peak Reverse Voltage V_RRM 50 100 200 300 400 600 800 1000
Maximum RMS Voltage
VRMS 35 70 140 210 280 420 560 700
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
I(AV)
@TA = 55℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
IFSM
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 8.0A
VF
Maximum DC Reverse Current
@ TA=25℃ at Rated DC Blocking Voltage
IR
@ TA=125℃
Maximum Reverse Recovery Time (Note 1) Trr
50 100 200 300 400 600 800 1000
8.0
150
1.0
1.3
1.7
10.0
400
50
80
Typical Junction Capacitance (Note 2)
Cj
100
65
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Units
V
V
V
A
A
V
uA
uA
nS
pF
℃
℃
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