HER601G_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Glass Passivated High Efficient Rectifiers

HER601G thru HER606G
Taiwan Semiconductor
CREAT BY ART
FEATURES
Glass Passivated High Efficient Rectifiers
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: R-6
R-6
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 1.65 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)
PARAMETER
HER HER HER HER HER HER
SYMBOL
601G 602G 603G 604G 605G 606G
Maximum repetitive peak reverse voltage
V_RRM
50 100 200 300 400 600
Maximum RMS voltage
V_RMS
35
70 140 210 280 420
Maximum DC blocking voltage
V_DC
50 100 200 300 400 600
Maximum average forward rectified current
I_F(AV)
6
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
150
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@6A
V_F
1.0
1.3 1.7
V
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
I_R
Maximum reverse recovery time (Note 2)
trr
Typical junction capacitance (Note 2)
Cj
Typical thermal resistance
Operating junction temperature range
Storage temperature range
R_θjA
T_J
T_STG
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
10
200
50
80
37
- 55 to +150
- 55 to +150
μA
75
ns
65
pF
O_C/W
O_C
O_C
Document Number: DS_D1408002
Version: F14