HER501 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

HER501 - HER508
5.0 AMP. High Efficiency Rectifiers
DO-201AD
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260^oC/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 1.65grams
Dimensions in inches and (millimeters)
Maximum Rating and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
HER
501
HER
502
HER
503
HER
504
HER
505
HER
506
HER
507
HER
508
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V_RRM
V_RMD
50 100 200 300 400 600 800 1000 V
35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
V_DC 50 100 200 300 400 600 800 1000 V
Maximum Average Forward Rectified
Current .375 (9.5mm) lead length
I_(AV)
5.0
A
@TA = 55 ^oC
Peak Forward Surge Current, 8.3 ms single
half sine-wave superimposed on rated load
I_FSM
200
A
(JEDEC method )
Maximum Instantaneous Forward Voltage
@5.0A
V_F
1.0
1.3
1.7
V
Maximum DC Reverse Current
@Ta=25 ^oC at Rated DC Blocking Voltage
I_R
@ Ta=125 ^oC
10
uA
250
uA
Maximum Reverse Recovery Time ( Note 1 ) Trr
50
75
nS
Typical Junction Capacitance ( Note 2 )
Cj
100
65
pF
Typical Thermal Resistance
R_θJA
40
Operating Temperature Range
T_J
-65 to +150
Storage Temperature Range
T_STG
-65 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 V D.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
o_C/W
o_C
o_C
Version: A06