HER1001G_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 10.0AMPS. Glass Passivated High Efficient Rectifiers

Pb
RoHS
COMPLIANCE
CREAT BY ART
Features
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor,
free wheeling, and polarity protection application
Green compound with suffix "G" on packing
code & prefix "G" on datecode
HER1001G - HER1008G
10.0AMPS. Glass Passivated High Efficient Rectifiers
TO-220AB
Mechanical Data
Case: TO-220AB Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260℃/10s/.16", (4.06mm) from case
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Marking Diagram
HER100XG = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
HER
1001G
HER HER
1002G 1003G
HER
1004G
HER
1005G
HER
1006G
HER
1007G
HER
1008G
Maximum Recurrent Peak Reverse Voltage
V_RRM 50 100 200 300 400 600 800 1000
Maximum RMS Voltage
V_RMS
35
70 140 210 280 420 560 700
Maximum DC Blocking Voltage
V_DC
50 100 200 300 400 600 800 1000
Units
V
V
V
Maximum Average Forward Rectified Current
I_F(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
I_FSM
125
Maximum Instantaneous Forward Voltage (Note 1)
@5A
V_F
1.0
1.3
1.7
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T _A=25 ℃
@ T _A=125 ℃
I_R
10
400
Maximum Reverse Recovery Time (Note 2)
Trr
50
80
Typical Junction Capacitance (Note 3)
Cj
60
40
Typical Thermal Resistance
Operating Temperature Range
R_θJC
T_J
1.5
- 65 to + 150
Storage Temperature Range
T_STG
- 65 to + 150
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
A
V
uA
uA
nS
pF
O_C/W
O_C
O_C
Version:E11