HER1001G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 10.0 AMPS. Glass Passivated High Efficient Rectifiers

HER1001G THRU HER1008G
Features
10.0 AMPS. Glass Passivated High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
10.0 Amperes
TO-220
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Case: TO-220 molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260^oC/10 seconds .16”,(4.06mm) from
case.
Weight: 2.24 grams
PIN 1
PIN 3
CASE
PIN 2
Positive CT
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ^{HER HER HER HER HER HER HER HER}
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G
Maximum Recurrent Peak Reverse
Voltage
V_RRM ^{50 100 200 300 400 600 800 1000}
Maximum RMS Voltage
V_RMS ^{35 70 140 210 280 420 560 700}
Maximum DC Blocking Voltage
V_DC ^{50 100 200 300 400 600 800 1000}
Maximum Average Forward Rectified
Current @TC = 100℃
I_(AV)
10.0
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
I_FSM
125
Maximum Instantaneous Forward Voltage
@ 5.0A
V_F
1.0
1.3
1.7
Maximum DC Reverse Current
@ TA=25℃ at Rated DC Blocking Voltage
I_R
@ TA=125℃
10.0
400
Maximum Reverse Recovery Time
Trr
50
80
(Note 1)
Typical Junction Capacitance ( Note 2 )
Cj
60
40
Typical Thermal Resistance (Note 3)
RθJC
1.5
Units
V
V
V
A
A
V
uA
uA
nS
pF
℃/W
Operating Temperature Range
TJ
-65 to +150
℃
Storage Temperature Range
TSTG
-65 to +150
℃
Notes: 1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
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