GBU804-K_16 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 8A, 400V - 1000V Glass Passivated Single-Phase Bridge Rectifiers

GBU804-K - GBU807-K
Taiwan Semiconductor
CREAT BY ART
8A, 400V - 1000V Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
- Ideal for printed circuit board
- High case dielectric strength of 1500 VRMS
- High surge current capability
- Typical I_R less than 0.1μA
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
GBU
MECHANICAL DATA
Case: GBU
Molding compound: UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: As marked
Mounting torque: 0.56 Nm (5 in-lbs.) max.
Weight: 4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
GBU804 GBU805 GBU806 GBU807
SYMBOL
-K
-K
-K
-K
Marking code
GBU804 GBU805 GBU806 GBU807
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
V_RMS
V_DC
I_F(AV)
400
280
400
600
800
420
560
600
800
8
1000
700
1000
Peak forward surge current,
8.3 ms single half sine-wave
I_FSM
200
Rating of fusing ( t<8.3ms)
I²t
166
Maximum Instantaneous Forward Voltage (Note 1)
I_F= 4 A
V_F
1.0
I_F= 8 A
1.1
Maximum reverse current @ rated V_R
T_J=25°C
T_J=125°C
Typical junction capacitance per leg (Note 2)
Typical thermal resistance
I_R
C_J
R_θJC
R_θJA
211
5
500
94
2
21
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T_J
T_STG
- 55 to +150
- 55 to +150
Note 2: Measured at 1MHz and applied reverse bias of 4.0V
UNIT
V
V
V
A
A
A²s
V
μA
pF
°C/W
°C
°C
Version: C1603