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FRAF801G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – Isolation 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers
FRAF801G THRU FRAF807G
Isolation 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
Features
ITO-220AC
Low forward voltage drop
High current capability
High reliability
High surge current capability
.185(4.7)
.173(4.4)
.124(3.16)
. 11 8 ( 3 . 0 0 )
.406(10.3)
.390(9.90)
.134(3.4)DIA
. 11 3(3. 0)D IA
.272(6.9)
.248(6.3)
. 112 (2. 85)
.100(2.55)
Mechanical Data
.606(15.5)
.583(14.8)
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260℃/10 seconds 0.25”,(6.35mm) from case.
Mounting position: Any
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
.063(1.6)
MAX
.110( 2.8)
.098(2.5)
.161(4.1)
.146(3.7)
.071(1.8)
MAX
.543(13.8)
.512(13.2)
2
PIN 1
PIN 2
Case Positive
.100(2.55)
.100(2.55)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol FRAF FRAF FRAF FRAF FRAF FRAF FRAF Units
801G 802G 803G 804G 805G 806G 807G
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
@TC = 55℃
I(AV)
8.0
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC IFSM
150
A
method )
Maximum Instantaneous Forward Voltage @ 8.0A
VF
Maximum DC Reverse Current @ TC=25℃
at Rated DC Blocking Voltage @ TC=125℃
IR
1.3
V
5.0
uA
100
uA
Maximum Reverse Recovery Time ( Note 2 )
Trr
150
250
500
nS
Typical Junction Capacitance ( Note 1 ) TJ=25℃
Cj
60
pF
Typical Thermal Resistance (Note 3)
RθJC
5.0
Operating and Storage Temperature Range
TJ ,TSTG
-65 to +150
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate
℃/W
℃
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