FRA801G_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

FRA801G - FRA807G
8.0 AMPS. Glass Passivated Fast Recovery Rectifiers
TO-220AC
.185(4.70)
.175(4.44)
Features
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.055(1.40)
.045(1.14)
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
.16(4.06)
.14(3.56)
PIN1
.037(0.94)
.027(0.68)
.594(15.1)
.587(14.9)
2
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
Mechanical Data
Cases: TO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260 ^oC /10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
.205(5.20)
.195(4.95)
PIN 1
PIN 2
.025(0.64)
.014(0.35)
CASE
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ^{FRA FRA FRA FRA FRA FRA} FRA Units
801G 802G 803G 804G 805G 806G 807G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V_RRM 50 100 200 400 600 800 1000 V
V_RMS 35 70 140 280 420 560 700 V
V_DC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
@TC = 55 ^oC
I_(AV)
8.0
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
I_FSM
150
A
method )
Maximum Instantaneous Forward Voltage @ 8.0A
V_F
Maximum DC Reverse Current @ TC=25 ^oC
at Rated DC Blocking Voltage @ TC=125 ^oC
I_R
Maximum Reverse Recovery Time ( Note 2 )
Trr
1.3
V
5.0
uA
100
uA
150
250
500
nS
Typical Junction Capacitance ( Note 1 ) TJ=25℃
Cj
50
Typical Thermal Resistance (Note 3)
R_θJA
3.0
Operating and Storage Temperature Range
TJ ,TSTG
-65 to +150
Notes:
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
pF
o_C/W
o_C
Version: A06