FR1001G_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – Isolated10 Amps Glass Passivated Fast Recovery Rectifiers

FR1001G - FR1007G
Isolated10 Amps Glass Passivated
Fast Recovery Rectifiers
TO-220AB
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: TO-220AB molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free.
Leads solderable per MIL-STD-202, Method
208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260^oC/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
FR
1001G
FR
1002G
FR
1003G
FR
1004G
FR
1005G
FR
1006G
FR
1007G
Units
Maximum Recurrent Peak Reverse Voltage V_RRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
V_RMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
V_DC
I_(AV)
50 100 200 400 600 800 1000 V
10
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
I_FSM
125
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 5.0A
V_F
1.3
V
Maximum DC Reverse Current @ TC=25 ^oC
at Rated DC Blocking Voltage @ TC=125 ^oC
I_R
Maximum Reverse Recovery Time ( Note 1) Trr
5.0
uA
100
uA
150
250
500
nS
Typical Junction Capacitance (Note 3)
Cj
40
pF
Typical Thermal Resistance RθJC (Note 2) R_θJC
3.0
Operating and Storage Temperature Range TJ ,TSTG
-65 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink
Size 2” x 3” x 0.25” Al-Plate.
3. Measured at 1MHz and Applied Reverse Voltage of 4.0 Volts D.C.
o_C/W
o_C
Version: A06